Power Electronics

Navitas Semiconductor is set to develop 10kV silicon carbide (SiC) power chips for the US government, according to a report by Compound Semiconductor. The high-voltage chips would serve applications requiring robust power conversion, such as grid infrastructure and defense systems. The announcement underscores growing US investment in domestic semiconductor capabilities, particularly in wide-bandgap materials like silicon carbide, which offer higher efficiency and voltage tolerance than traditional silicon chips.

Samsung Electronics is reshaping its next-generation DRAM roadmap by elevating B1b wafer-to-wafer hybrid bonding to become the core technology behind its D0a node, according to DigiTimes Asia. The move signals Samsung's effort to stay competitive in advanced memory as the industry pushes toward denser, more power-efficient DRAM for AI and data-center demand.